1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com TP2502 features low threshold (-2.4v max.) high input impedance low input capacitance (125pf max.) fast switching speeds low on-resistance free from secondary breakdown low input and output leakage applications logic level interfaces - ideal for ttl and cmos solid state relays battery operated systems photo voltaic drives analog switches general purpose line drivers telecom switches ? ? ? ? ? ? ? ? ? ? ? ? ? ? general description this low threshold enhancement-mode (normally-off) tran- sistor utilizes a vertical dmos structure and supertexs well- proven silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coef?cient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. p-channel enhancement mode vertical dmos fets ordering information device package options bv dss /bv dgs (v) r ds(on) () v gs(th) (max) (v) i d(on) (min) (a) to-243aa (sot-89) die * TP2502 TP2502n8-g TP2502nd -20 2.0 -2.4 -2.0 -g indicates package is rohs compliant (green) * mil visual screening available. parameter value drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55c to +150c soldering temperature* 300c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. * distance of 1.6 mm from case for 10 seconds. absolute maximum ratings product marking tp5lw w = code for week sealed = green packagin g to-243aa (sot-89) (n8) ga te source drain drain to-243aa (sot-89) (n8) pin con?guration package may or may not include the following marks: si or
2 TP2502 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com sym parameter min typ max units conditions electrical characteristics (t a = 25c unless otherwise speci?ed ) bv dss drain-to-source breakdown voltage -20 - - v v gs = 0v, i d = -2.0ma v gs(th) gate threshold voltage -1.0 - -2.4 v v gs = v ds , i d = -1.0ma ?v gs(th) change in v gs(th) with temperature - 3.0 4.5 mv/ o c v gs = v ds , i d = -1.0ma i gss gate body leakage - - -100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current - - -100 a v gs = 0v, v ds = max rating - -10 ma v ds = 0.8 max rating, v gs = 0v, t a = 125c i d(on) on-state drain current -0.4 -0.7 - a v gs = -5.0v, v ds = -15v -2.0 -3.3 - v gs = -10v, v ds = -15v r ds(on) static drain-to-source on-state resistance - 2.0 3.5 v gs = -5.0v, i d = -250ma 1.5 2.0 v gs = -10v, i d = -1.0a ?r ds(on) change in r ds(on) with temperature - 0.75 1.2 %/ o c v gs = -10v, i d = -1.0a g fs forward transconductance 300 650 - mmho v ds = -15v, i d = -1.0a c iss input capacitance - - 125 pf v gs = 0v, v ds = -20v, f = 1.0 mhz c oss common source output capacitance - - 70 c rss reverse transfer capacitance - - 25 t d(on) turn-on delay time - - 10 ns v dd = -20v, i d = -1.0a, r gen = 25? t r rise time - - 11 t d(off) turn-off delay time - - 15 t f fall time - - 12 v sd diode forward voltage drop - -1.3 -2.0 v v gs = 0v, i sd = -1.5a t rr reverse recovery time - 300 - ns v gs = 0v, i sd = -1.5a notes: all d.c. parameters 100% tested at 25c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) all a.c. parameters sample tested. 1. 2. thermal characteristics package i d (continuous) ? (ma) i d (pulsed) (a) power dissipation @ t a = 25 o c (w) jc ( o c/w) ja ( o c/w) i dr ? (ma) i drm (a) to-243aa -630 -3.3 1.6 ? 15 78 ? -630 -3.3 ? i d (continuous) is limited by max rated t j . ? mounted on fr5 board, 25mm x 25mm x 1.57mm. 90% 10% 90% 90% 10% 10% puls e genera to r v dd r l outpu t d.u.t . t (on) t d(on) t (off ) t d(off) t f t r inpu t input output 0v v dd r gen 0v -10v switching waveforms and test circuit
3 TP2502 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com typical performance curves output characteristics -5 -4 -3 -2 -1 0 0 -10 -20 -30 -40 v ds (volts) saturation characteristics -5 -4 -3 -2 -1 0 0 - 2 - 4 - 6 -10 -8 maximum rated safe operating area -0.1 - 10 0 -10 -1.0 -10 -1.0 -0.1 -0.01 thermal response characteristic s ) d e z i l a m r o n ( e c n a t s i s e r l a m r e h t 1. 0 0. 8 0. 6 0. 4 0. 2 0.001 1 0 0.01 0.1 1 t p (seconds) transconductance vs. drain current 1.0 0.8 0.6 0.4 0.2 0 0 -2.0 -0.4 -0. 8 - 1. 2 - 1. 6 power dissipation vs. ambient temperatur e 0 1 50 10 0 50 2. 0 1. 6 1. 2 0. 8 0. 4 0 12 5 75 25 to-243aa(pulsed ) -4v -3v -5v -6v -7v -8v -9v 0 to-243aa (dc) to-243a a -4v -3v -5v -6v -7v -8v -9v v gs = -10v v ds = -15v t a = -55c t a = 25 c t a = 150c t a = 25 c to-243aa t a = 25 c p d = 1.6 w i d ) s e r e p m a ( i d ) s e r e p m a ( v ds (volts ) v gs = -10v g s f ) s n e m e i s ( i d (amperes) t a (c) p d ) s t t a w ( v ds (volts) i d ) s e r e p m a (
4 TP2502 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com typical performance curves (cont.) gate drive dynamic characteristics t j (c) on-resistance vs. drain current ) d e z i l a m r o n ( transfer characteristics capacitance vs. drain-to-source voltage 200 ) s d a r a f o c i p ( c 0 - 10 -20 -30 -40 100 0 - 2 - 4 - 6 - 8 - 10 -5 -4 -3 -2 -1 0 -5 0 0 50 10 0 1 50 1.1 1.0 0.9 5 4 3 2 1 0 1.4 1.2 1.0 0.8 0.6 2.0 1.6 1.2 0.8 0.4 0 -1 0 -8 -6 -4 -2 0 0 1.0 2.0 2.5 0.5 1.5 -5 0 0 50 100 150 v ds = -40v v ds = -10v v gs = -5 v v gs = -10v t a = -55 c 0 - 1 - 2 - 3 - 5 -4 f = 1mhz 80 pf (th) v @ -1ma r ds (on) @ -10v, -1a 150 50 0 200 pf 150 c 25 c r ) n o ( s d ) s m h o ( v b s s d ) d e z i l a m r o n ( t j (c) i d (amperes ) bv dss variation with te mperature v ) h t ( s g ) d e z i l a m r o n ( r ) n o ( s d ) d e z i l a m r o n ( v (th) and r ds variation with temperature v gs (volts) i d ) s e r e p m a ( v ds = -15v q g (nanocoulombs ) v s g ) s t l o v ( v ds (volts) c is s c oss c rs s
supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate product liability indemnification insurance agreement. supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. no responsibility is assumed for possible omissions and inaccuracies. circuitry and specifications are subject to change without notice. for the latest product specifications refer to the supertex inc. website: http//www .supertex.com . ?2009 all rights reserved. unauthorized use or reproduction is prohibited . 1235 bordeaux drive, sunnyvale, ca 94089 te l: 408-222-8888 www .supertex.com 5 TP2502 (the package drawing(s) in this data sheet may not re?ect the most current speci?cations. for the latest package outline information go to http://www.supertex.com/packaging.htm l .) doc.# dsfp-TP2502 a022309 3-lead to-243aa (sot-89) package outline (n8) symbol a b b1 c d d1 e e1 e e1 h l dimensions (mm) min 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.13 1.50 bsc 3.00 bsc 3.94 0.89 nom - - - - - - - - - - max 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20 jedec registration to-243, variation aa, issue c, july 1986. drawings not to scale . supertex doc. #: dspd-3to243aan8, version d070908. b b1
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